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MCIRF4N65 MFIRF4N65 MKIRF4N65 MJIRF4N65
ID = 4A VDS = 650V RDS(on)MAX = 2.3Ω
Major Ratings and Characteristics
Characteristics
Values
Units
IDS 4 A IDM 16 A VDS 650 V
VGS TJ T storage
±30 150 -55 ~150
V
℃ ℃
POWER MOSFET
Description/ Features The MCIRF4N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
MCIRF4N65 Datasheet
