GF2304 Datasheet (General Semiconductor) - N-Channel Enhancement-Mode MOSFET

GF2304, N-Channel Enhancement-Mode MOSFET

GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) 3 12 .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) .055 (1.40) .047 (1.20) Top View TGREENNCFHET® 0.031 (0.8) 0.035 (0.9) Pin Configuration 1.

Gate 2.

Source 3.

Drain Dimensions in inches and (millimeters) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Mounting Pad Layout max.

.004 (0.1) .007 (.180) .003 (.085) .047 (1.20) .035 (0.90) .020 (0.51) .020 (0.51

GF2304 Features

* Advanced trench process technology

* High density cell design for ultra-low on-resistance

* Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities

* Compact and low profile Maximum Ratings and Thermal Characteristics (TA = 25