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BS250 - DMOS Transistors (P-Channel)

Features

  • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) D G S.

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Other Datasheets by General Semiconductor (now Vishay)

Part Number Description
BS208 DMOS Transistors (P-Channel)
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BS250 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g On special request, this transistor is also manufactured in the pin configuration TO-18.
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