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BAT86
Schottky Diodes
DO-35
min. 1.083 (27.5)
FEATURES ♦ For general purpose applications. ♦ This diode features low turn-on voltmax. ∅.079 (2.0)
max. .150 (3.8)
age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
Cathode Mark
min. 1.083 (27.5)
♦ Metal-on-silicon Schottky barrier device which is
max. ∅.020 (0.52)
♦ This diode is also available in the Mini-MELF case
with the type designation BAS86.
BAT86 Datasheet
