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MURTA60060 - Silicon Super Fast Recovery Diode

Download the MURTA60060 datasheet PDF. This datasheet also covers the MURTA60020 variant, as both devices belong to the same silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types up to 600 V VRRM MURTA60020 thru MURTA60060R VRRM = 200 V - 600 V IF = 600 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA60020 (R) MURTA60040 (R) MURTA60060 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 50 100 200 35 71 141 50 100 200 Continuous forward current IF TC ≤ 100 °C 600 600.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MURTA60020-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MURTA60060
Manufacturer GeneSiC
File Size 537.06 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MURTA60060 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM MURTA60020 thru MURTA60060R VRRM = 200 V - 600 V IF = 600 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA60020 (R) MURTA60040 (R) MURTA60060 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 50 100 200 35 71 141 50 100 200 Continuous forward current IF TC ≤ 100 °C 600 600 600 Unit V V V A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.
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