Datasheet4U Logo Datasheet4U.com

MURTA300120R - Silicon Super Fast Recovery Diode

Download the MURTA300120R datasheet PDF. This datasheet also covers the MURTA30060 variant, as both devices belong to the same silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 600 V to 1200 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MURTA30060 thru MURTA300120R VRRM = 600 V - 1200 V IF(AV) = 300 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA30060(R) MURTA300120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MURTA30060-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MURTA300120R
Manufacturer GeneSiC
File Size 415.50 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MURTA300120R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MURTA50020 Silicon Super Fast Recovery Diode America Semiconductor
MURTA50020R Silicon Super Fast Recovery Diode America Semiconductor
MURTA50040 Silicon Super Fast Recovery Diode America Semiconductor
MURTA50040R Silicon Super Fast Recovery Diode America Semiconductor
MURTA50060 Silicon Super Fast Recovery Diode America Semiconductor

Other Datasheets by GeneSiC

Part Number Description
MURTA300120 Silicon Super Fast Recovery Diode
MURTA30060 Silicon Super Fast Recovery Diode
MURTA30060R Silicon Super Fast Recovery Diode
MURTA200120 Silicon Super Fast Recovery Diode
MURTA200120R Silicon Super Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA30060 thru MURTA300120R VRRM = 600 V - 1200 V IF(AV) = 300 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA30060(R) MURTA300120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 1200 --1200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURTA30060(R) MURTA300120(R) Average forward current (per