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MBRT40060 - (MBRT40045 - MBRT400100R) Silicon Power Schottky Diode

Download the MBRT40060 datasheet PDF. This datasheet also covers the MBRT40045 variant, as both devices belong to the same (mbrt40045 - mbrt400100r) silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types up to 100 V VRRM.
  • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRT40045_GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRT40060
Manufacturer GeneSiC
File Size 721.73 KB
Description (MBRT40045 - MBRT400100R) Silicon Power Schottky Diode
Datasheet download datasheet MBRT40060 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MBRT40045 thru MBRT400100R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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