MBRH12020R - Silicon Power Schottky Diode

Product Overview

GeneSiC

Part number	MBRH12020R
Manufacturer	GeneSiC
File Size	494.36 KB
Description	Silicon Power Schottky Diode
Datasheet	MBRH12020R Datasheet
Note	This datasheet PDF includes multiple part numbers: MBRH12020R, MBRH12020. Please refer to the document for exact specifications by model.
Additional preview pages of the MBRH12020R datasheet.

High Surge Capability.
Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.3 ms Conditions MBRH120.

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Published: Feb 12, 2014 |