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MBRF50080 - Silicon Power Schottky Diode

Download the MBRF50080 datasheet PDF. This datasheet also covers the MBRF50045 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 45 V to 100 V VRRM.
  • Not ESD Sensitive MBRF50045 thru MBRF500100R VRRM = 45 V - 100 V IF(AV) = 500 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tst.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRF50045-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRF50080
Manufacturer GeneSiC
File Size 461.03 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRF50080 Datasheet

Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBRF50045 thru MBRF500100R VRRM = 45 V - 100 V IF(AV) = 500 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF50045(R) MBRF50060(R) MBRF50080(R)
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