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MBR3520 - Silicon Power Schottky Diode

Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR3520 thru MBR3540R VRRM = 20 V - 40 V IF = 35 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking.

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Datasheet Details

Part number MBR3520
Manufacturer GeneSiC
File Size 774.63 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR3520 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR3520 thru MBR3540R VRRM = 20 V - 40 V IF = 35 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.
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