MBR300200CTR, MBR300150CT - Silicon Power Schottky Diode

GeneSiC

Datasheet Details

Part number	MBR300200CTR, MBR300150CT
Manufacturer	GeneSiC
File Size	696.80 KB
Description	Silicon Power Schottky Diode
Datasheet	MBR300150CT-GeneSiC.pdf
Note	This datasheet PDF includes multiple part numbers: MBR300200CTR, MBR300150CT. Please refer to the document for exact specifications by model.

High Surge Capability.
Types from 150 V to 200 V VRRM.
Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 t.

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Published: Jun 27, 2019 |