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GD2X30MPS12D 1200V 60A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC*VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Package TO-247-3
TM
VRRM
=
IF (TC = 148°C) =
QC
=
1200 V 60 A * 194 nC *
Case
RoHS
AKA
REACH
Advantages
• Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching
Applications
• Power Factor Correction (PFC) • Electric Ve
GD2X30MPS12D Datasheet
