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GB50SLT12-247 - Silicon Carbide Schottky Diode

GB50SLT12-247 Description

GB50SLT12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode .

GB50SLT12-247 Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

GB50SLT12-247 Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Motor Drives
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Inverters & Wind Energy Conv

📥 Download Datasheet

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Datasheet Details

Part number
GB50SLT12-247
Manufacturer
GeneSiC
File Size
512.14 KB
Datasheet
GB50SLT12-247-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode GeneSiC
GeneSiC GB50SLT12-247-like datasheet