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Die Datasheet
GA50JT12-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
210 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
VDS = 1200 V
RDS(ON)
= 20 mΩ
ID @ 25 oC = 100 A
hFE = 85
Die Size = 4.35 mm x 4.
GA50JT12-CAL Datasheet
