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G3R20MT12N Silicon Carbide MOSFET

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Description

G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

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Datasheet Specifications

Part number
G3R20MT12N
Manufacturer
GeneSiC
File Size
1.15 MB
Datasheet
G3R20MT12N-GeneSiC.pdf
Description
Silicon Carbide MOSFET

Features

* G3R™ Technology - +15 V / -5 V Gate Drive
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Body Diode
* High Avalanche and Short Circuit Ruggedness

Applications

* Solar Inverters
* Motor Drives
* EV Charging
* High Voltage DC-DC Converters
* Switched Mode Power Supplies
* UPS
* Smart Grid Transmission and Distribution
* Induction Heating and Welding Absolute Maximum Ratings (At TC = 25°C Unles

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