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FR12B05 - Silicon Fast Recovery Diode

Features

  • High Surge Capability.
  • Types from 100 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR12B05 thru FR12JR05 VRRM = 100 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR12B(R)05 FR12D(R)05 FR12G(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltag.

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Datasheet Details

Part number FR12B05
Manufacturer GeneSiC
File Size 773.52 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet FR12B05 Datasheet

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Full PDF Text Transcription

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Silicon Fast Recovery Diode Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR12B05 thru FR12JR05 VRRM = 100 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR12B(R)05 FR12D(R)05 FR12G(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 100 200 400 70 140 280 100 200 400 Continuous forward current IF TC ≤ 100 °C 12 12 12 FR12J(R)05 Unit 600 V 420 V 600 V 12 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.
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