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FR12B02 - Silicon Fast Recovery Diode

Features

  • High Surge Capability.
  • Types from 100 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR12B02 thru FR12JR02 VRRM = 100 V - 600 V IF = 12 A AC DO-4 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR12B(R)02 FR12D(R)02 FR12G(R)02 Repetitive peak reverse voltage VRRM 100 200.

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Datasheet Details

Part number FR12B02
Manufacturer GeneSiC
File Size 783.81 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet FR12B02 Datasheet

Full PDF Text Transcription (Reference)

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Silicon Fast Recovery Diode Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR12B02 thru FR12JR02 VRRM = 100 V - 600 V IF = 12 A AC DO-4 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR12B(R)02 FR12D(R)02 FR12G(R)02 Repetitive peak reverse voltage VRRM 100 200 400 RMS reverse voltage DC blocking voltage VRMS VDC 70 140 280 100 200 400 Continuous forward current IF TC ≤ 100 °C 12 12 12 FR12J(R)02 Unit 600 V 420 V 600 V 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.
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