1N3879

The 1N3879 is Silicon Fast Recovery Diode designed by GeneSiC.

Product Overview

GeneSiC

Part number	1N3879
Manufacturer	GeneSiC
File Size	730.19 KB
Description	Silicon Fast Recovery Diode
Datasheet	1N3879-GeneSiC.pdf
Additional preview pages of the 1N3879 datasheet.

High Surge Capability.
Types up to 400 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3879 thru 1N3883R VRRM = 50 V - 400 V IF = 6 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC.

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Published: Jun 6, 2017 |