1N3213R

The 1N3213R is Silicon Standard Recovery Diode designed by GeneSiC.

Product Overview

GeneSiC

Part number	1N3213R, 1N3212
Manufacturer	GeneSiC
File Size	682.60 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N3212-GeneSiC.pdf
Note	This datasheet PDF includes multiple part numbers: 1N3213R, 1N3212. Please refer to the document for exact specifications by model.
Additional preview pages of the 1N3213R datasheet.

High Surge Capability.
Types from 400 V to 600 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous.

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Published: Jun 2, 2017 |