1N3212

The 1N3212 is Silicon Standard Recovery Diode designed by GeneSiC.

Product Overview

GeneSiC

Part number	1N3212
Manufacturer	GeneSiC
File Size	682.60 KB
Description	Silicon Standard Recovery Diode
Datasheet	1N3212-GeneSiC.pdf
Additional preview pages of the 1N3212 datasheet.

High Surge Capability.
Types from 400 V to 600 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous.

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Published: Jun 2, 2017 |