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GS61004B - 100V enhancement mode GaN transistor

Datasheet Summary

Description

The GS61004B is an enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown, high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 100V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 16 mΩ.
  • IDS(max) = 38 A.
  • Ultra-low FOM Island Technology® die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reve.

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Datasheet preview – GS61004B

Datasheet Details

Part number GS61004B
Manufacturer GaN Systems
File Size 883.06 KB
Description 100V enhancement mode GaN transistor
Datasheet download datasheet GS61004B Datasheet
Additional preview pages of the GS61004B datasheet.

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Full PDF Text Transcription

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GS61004B 100V enhancement mode GaN transistor Datasheet Features • 100V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 16 mΩ • IDS(max) = 38 A • Ultra-low FOM Island Technology® die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 4.6 x 4.
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