GS-065-014-6-L Datasheet (GaN Systems) - 700V E-mode GaN transistor

GS-065-014-6-L, 700V E-mode GaN transistor

The GS-065-014-6-L is an enhancement mode GaNon-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu

GS-065-014-6-L Features

* 700 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, small 5x6 mm PDFN package

* RDS(on) = 95 mΩ

* IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A

* Ultra-low FOM

* Simple gate drive requirements (0 V to