GU88LS02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

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Datasheet Details

Part number: GU88LS02
Manufacturer: GTM
File Size: 299.98 KB
Datasheet: GU88LS02_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GU88LS02 Product details

Description

The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.. Low Gate Charge. Simple Drive Requirement. Fast Switching.

Features

Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 75 62.5 350.

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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