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GU70L02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GU70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation VGS ID @TC=25к ID @TC=100к IDM PD @TC=25к Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Ju.

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Datasheet Details

Part number GU70L02
Manufacturer GTM
File Size 279.05 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GU70L02 Datasheet

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/02B GU70L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 9m 66A Description The GU70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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