Datasheet Details
- Part number
- GSB1386
- Manufacturer
- GTM
- File Size
- 268.89 KB
- Datasheet
- GSB1386-GTM.pdf
- Description
- PNP EPITAXIAL SILICON TRANSISTOR
GSB1386 Description
1/3 GSB1386 PNP EPITAXIAL SILICON TRANSISTOR .
The GSB1386 is a epitaxial planar type PNP silicon transistor .
Low VCE(sat).
Excell.
GSB1386 Features
* Low VCE(sat). VCE(sat) = -0.35V(Typ. ) (IC/IB = -4A / -0.1A).
* Excellent DC current gain characteristics.
* Complements the GSD2098/GSD2118/GSD2097.
Package Dimensions
REF. A
Millimeter
Min. Max. 4.4
4.6
REF. G
Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H
1.50 REF. C 1.50 1.70 I
GSB1386 Applications
* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07
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