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GS3018K - N-CHANNEL MOSFET

Description

The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GS3018K is universally used for all commercial-industrial applications.

Features

  • Simple Drive Requirement.
  • Small Package Outline.
  • RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a.

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Datasheet Details

Part number GS3018K
Manufacturer GTM
File Size 292.54 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet GS3018K Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B GS3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8 640mA Description The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS3018K is universally used for all commercial-industrial applications.
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