GJ09N20 Datasheet (GTM) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GJ09N20, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications at power dissipation levels to approximately 50 watts

GJ09N20 Features

* Simple Drive Requirement

* Lower On-resistance

* Fast Switching Characteristic Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70