GI80LS02 Datasheet (GTM) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GI80LS02, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.

The through-hole version (TO-251) is available for low-profile applications and suited for low voltage a

GI80LS02 Features

* Low On-resistance

* Simple Drive Requirement

* Fast Switching Speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.4