GI6679 Datasheet (GTM) - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GI6679, P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -75A The GI6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-251 package is available for low-profile applications and suited for low v

GI6679 Features

* Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Volt