GE2026 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

GTM

Part number	GE2026
Manufacturer	GTM
File Size	382.21 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	GE2026 Datasheet
Additional preview pages of the GE2026 datasheet.

The GE2026 is designed for general purpose application.

Low Collector Saturation Voltage : VCE (sat) =1.0V (Max. ) @ IC=2A, IB=0.2A, Package Dimensions Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Device TA=25к PD Dissipation TC=25к PD Junction Temperature TJ Storage Temperature Tstg REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 1.

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Published: Sep 27, 2007 |