GE03N70 Datasheet (GTM) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE03N70, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE03N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/700V RDS(ON) 4.0 ID 3.3A The GE03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.

TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.

The

GE03N70 Features

* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source