GD1SS356
Description
S U R F A C E M O U N T, B A N D S W I T C H I N G D I O D E V O LT A G E 3 5 V, C U R R E N T 0 . 1 A
The GD1SS356 is designed for high frequency switching application.
Features
High reliability Small mode type
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Reverse Voltage(DC) Forward Current(DC) Junction Temperature Storage Temperature Total Power Dissipation Symbol VR IF Tj Tstg PD Ratings 35 100 +125 -55 ~ +150 225 m W Unit V m A
Electrical Characteristics at Ta = 25
Parameter Reverse Breakdown Reverse Current(DC) Reverse Voltage(DC) Diode Capacitance Forward dynamic resistance Symbol VR IR VF CD Min. 35 Typ. 0.9 0.65 Max. 10 1 1.2 0.9 Unit V n A V p F IR=10u A VR=25V IF=10m A VR=6, f=1MHz IF=2m A, f=100MHz Test Conditions rf
Note 1: Rated input/output frequency:...
