G3J14 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/04 REVISED DATE : G3J14 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID .
The G3J14 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: G3J14
Manufacturer: GTM
File Size: 403.66 KB
Datasheet: G3J14_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain

Applications

* and suited for low voltage applications such as DC/DC converters.
* Low On-resistance
* High-speed switching

G3J14 Distributors

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G3J14 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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