G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS.
The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.

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G3407 Datasheet Preview — Preview of G3407 PDF

Datasheet Specifications

Part number: G3407
Manufacturer: GTM
File Size: 329.42 KB
Datasheet: G3407_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous D

Applications

* Lower Gate Charge
* Small Package Outline

G3407 Distributors

📁 Related Datasheet

G3401 G3402 G3403

📌 All Tags

G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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