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G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Pb Free Plating Product ISSUED DATE :2005/11/11 REVISED DATE : G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8 640mA Descrip.
The G3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number
G3018K
Manufacturer
GTM
File Size
293.98 KB
Datasheet
G3018K_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Small Package Outline
* RoHS Compliant Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1,2 Power Dissip

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