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GS8672T38BGE - 72Mb SigmaDDR-II+ Burst of 2 ECCRAM

Download the GS8672T38BGE datasheet PDF (GS8672T20BE included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 72mb sigmaddr-ii+ burst of 2 eccram.

Features

  • 2.5 Clock Latency.
  • On-Chip ECC with virtually zero SER.
  • Simultaneous Read and Write SigmaDDR™ Interface.
  • Common I/O bus.
  • JEDEC-standard package.
  • Double Data Rate interface.
  • Byte Write capability.
  • Burst of 2 Read and Write.
  • On-Die Termination (ODT) on Data (DQ), Byte Write (BW), and Clock (K, K) outputs.
  • 1.8 V +100/.
  • 100 mV core power supply.
  • 1.5 V HSTL Interface.
  • Pipelined read ope.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GS8672T20BE-GSITechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS8672T38BGE
Manufacturer GSI Technology
File Size 205.61 KB
Description 72Mb SigmaDDR-II+ Burst of 2 ECCRAM
Datasheet download datasheet GS8672T38BGE Datasheet
Other Datasheets by GSI Technology

Full PDF Text Transcription

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GS8672T20/38BE-633/550/500/450/400 165-Bump BGA Commercial Temp Industrial Temp 72Mb SigmaDDR-II+TM Burst of 2 ECCRAMTM 633 MHz–400 MHz 1.8 V VDD 1.5 V I/O Features • 2.5 Clock Latency • On-Chip ECC with virtually zero SER • Simultaneous Read and Write SigmaDDR™ Interface • Common I/O bus • JEDEC-standard package • Double Data Rate interface • Byte Write capability • Burst of 2 Read and Write • On-Die Termination (ODT) on Data (DQ), Byte Write (BW), and Clock (K, K) outputs • 1.8 V +100/–100 mV core power supply • 1.5 V HSTL Interface • Pipelined read operation with self-timed Late Write • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • IEEE 1149.
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