GS832132E-V, GS832118E-V Datasheet (GSI Technology)

GS832132E-V, GS832118E-V, 36Mb Sync Burst SRAMs

Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications,

GS832132E-V Features

* IEEE 1149.1 JTAG-compatible Boundary Scan

* 1.8 V or 2.5 V core power supply

* 1.8 V or 2.5 V I/O supply

* LBO pin for Linear or Interleaved Burst mode

* Internal input resistors on mode pins allow floating mode pins

* Byte Write (BW) and/or Global W