GS820E32T - 64K x 32 / 2M Synchronous Burst SRAM

Product Overview

GSI Technology

Datasheet Details

Part number	GS820E32T
Manufacturer	GSI Technology
File Size	345.08 KB
Description	64K x 32 / 2M Synchronous Burst SRAM
Datasheet	GS820E32T Datasheet
Additional preview pages of the GS820E32T datasheet.

Product details

Description

Applications The GS820E32 is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter.Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.Core and Interface Voltages The GS820E32 operates on a 3.3V power supply and all inputs/ outputs are 3.3V and 2.5V compatible.Separate output power (VD

Features

FT pin for user configurable flow through or pipelined operation.
Dual Cycle Deselect (DCD) Operation.
3.3V +10%/-5% Core power supply.
2.5V or 3.3V I/O supply.
LBO pin for linear or interleaved burst mode.
Internal input resistors on mode pins allow floating mode pins.
Default to Interleaved Pipelined Mode.
Byte write (BW) and/or global write (GW) operation.
Common data inputs and data outputs.
Cl.

📁 Similar Datasheet

GS8206 - 3-channel constant current LED driver (Genesis)
GS8000 - DVI / HDMI Extender (Gennum Corporation)
GS8041 - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
GS8042 - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
GS8043 - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
GS8043NH - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
GS8043NL - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
GS8051 - 250MHZ CMOS Rail-to-Rail Output Opamps (GAINSIL)

Other Datasheets by GSI Technology

GS820E32A - 64K x 32 / 2M Synchronous Burst SRAM
GS82032AT - 2Mb Synchronous Burst SRAM
GS8256418GB-200 - 288Mb DCD Sync Burst SRAM
GS8256418GB-250 - 288Mb DCD Sync Burst SRAM
GS8256418GB-333 - 288Mb DCD Sync Burst SRAM
GS8256418GB-400 - 288Mb DCD Sync Burst SRAM

Published: Sep 22, 2005 |