SSF5508D Description
Main Product Characteristics SSF5508D Preliminary VDSS RDS(on) 60V（Typ） 3.8mohm（Typ） ID 110A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.
SSF5508D Features
* SSF5508D Top View (DPAK)
* Advanced trench MOSFET process technology
* Special designed for convertors and power controls
* Ultra low on-resistance
* 150℃ operating temperature
* High Avalanche capability and 100% tested
SSF5508D Applications
* Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C IDM ISM
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current② Pulsed Source Current. (Body Diode)
Power Dissipation③
PD @TC = 25°C Linear derating factor
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