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SSF3051G7, SSF3051G7-GOOD P-Channel MOSFET

SSF3051G7 Description

Main Product Characteristics VDSS -30V RDS(on) 45mohm(typ.) ID -4A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

SSF3051G7 Features

* SOT23-6
* Advanced trench MOSFET process technology
* Special designed for buttery protection, load switching and general power management
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature
* Lead free pro

SSF3051G7 Applications

* Absolute Max Rating Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -30 ±25 -4 -25 1.7 -55 To 150 Unit V V A A W ℃ Thermal Resi

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SSF3051G7, SSF3051G7-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SSF3051G7, SSF3051G7-GOOD
Manufacturer
GOOD-ARK
File Size
929.60 KB
Datasheet
SSF3051G7-GOOD-ARK.pdf
Description
P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SSF3051G7, SSF3051G7-GOOD.
Please refer to the document for exact specifications by model.

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P-Channel MOSFET GOOD-ARK
GOOD-ARK SSF3051G7-like datasheet