Description
Main Product Characteristics GSJD6505 650V N-Channel MOSFET D D VDS 650V RDS(ON) 750mΩ G ID 5A S G S .
The GSJD6505 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
650
Gate-Source Voltage, AC (f>1 Hz)
VGS
±30
Drain Current-Continuous (TC=25°C)
5
ID
Drain Current-Continuous (TC=100°C)
3
Drain Current-Pulsed1
IDM
Power Dissipation (TC=2