Description
GSFP0255 20V P-Channel MOSFET Main Product Characteristics D BVDSS -20V DD DD RDS(ON) ID 8.3mΩ -55A .
The GSFP0255 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C)