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G2K2P10S2E Dual P-Channel Enhancement Mode Power MOSFET

G2K2P10S2E Description

G2K2P10S2E Dual P-Channel Enhancement Mode Power MOSFET .
D1 D2 The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Details

Part number
G2K2P10S2E
Manufacturer
GOFORD
File Size
589.66 KB
Datasheet
G2K2P10S2E-GOFORD.pdf
Description
Dual P-Channel Enhancement Mode Power MOSFET

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Dual P-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD G2K2P10S2E-like datasheet