G1NP02ELL N and P Channel Enhancement Mode Power MOSFET

Description

GOFORD N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: G1NP02ELL
Manufacturer: GOFORD
File Size: 554.33 KB
Datasheet: G1NP02ELL-GOFORD.pdf
Description: N and P Channel Enhancement Mode Power MOSFET

Features

* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ
* PMOS
* VDS
* ID (at VGS = -10V)
* RDS(ON) (at VGS = -4.5V)
* RDS(ON) (at VGS = -2.5V)
* RDS(ON) (at VGS

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G1NP02ELL and Channel Enhancement Mode Power MOSFET GOFORD

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