Datasheet Details
- Part number
- G1NP02ELL
- Manufacturer
- GOFORD
- File Size
- 554.33 KB
- Datasheet
- G1NP02ELL-GOFORD.pdf
- Description
- N and P Channel Enhancement Mode Power MOSFET
G1NP02ELL Description
GOFORD N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
G1NP02ELL Features
* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* RDS(ON) (at VGS = 1.8V)
20V 1.36A < 375mΩ < 450mΩ
< 800mΩ
* PMOS
* VDS
* ID (at VGS = -10V)
* RDS(ON) (at VGS = -4.5V)
* RDS(ON) (at VGS = -2.5V)
* RDS(ON) (at VGS
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