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G110N06 MOSFET

G110N06 Description

GOFORD General .
The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications.

G110N06 Features

* VDSS RDS(ON) ID @ 10V(Typ) 55V 5.2 mΩ 110A
* Ultra Low On-Resistance

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Datasheet Details

Part number: G110N06
Manufacturer: GOFORD
File Size: 1.54 MB
Datasheet: G110N06-GOFORD.pdf
Description: MOSFET

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GOFORD G110N06-like datasheet