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G110N06 MOSFET

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Description

GOFORD General .
The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number
G110N06
Manufacturer
GOFORD
File Size
1.54 MB
Datasheet
G110N06-GOFORD.pdf
Description
MOSFET

Features

* VDSS RDS(ON) ID @ 10V(Typ) 55V 5.2 mΩ 110A
* Ultra Low On-Resistance

G110N06 Distributors

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