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G05NP10S N- and P-Channel Enhancement Mode Power MOSFET

G05NP10S Description

GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

G05NP10S Features

* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V) 100V 5A < 170mΩ < 180mΩ Schematic diagram
* PMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V) -100V -6A < 200mΩ
* 100% Avalanche Tested
* RoHS Compliant Marki

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Datasheet Details

Part number
G05NP10S
Manufacturer
GOFORD
File Size
571.03 KB
Datasheet
G05NP10S-GOFORD.pdf
Description
N- and P-Channel Enhancement Mode Power MOSFET

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and P-Channel Enhancement Mode Power MOSFET GOFORD
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