66N03 - N-Channel Enhancement Mode Power MOSFET

Datasheet Details

Part number	66N03
Manufacturer	GOFORD
File Size	843.31 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	66N03-GOFORD.pdf

The 66N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 36A < 8.5mΩ < 14mΩ l 100% Avalanche Tested l RoHS Compliant Schematic Diagram.

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Published: Nov 13, 2024 |