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21N06 MOSFET

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Description

GOFORD .
The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
21N06
Manufacturer
GOFORD
File Size
1.39 MB
Datasheet
21N06-GOFORD.pdf
Description
MOSFET

Features

* VDSS R DS(ON) ID @ 10V (typ) 60V 24 m Ω 21 A
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for h

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