100P03 - MOSFET

The 100P03 by GOFORD is a MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	100P03
Manufacturer	GOFORD
File Size	3.09 MB
Description	MOSFET
Datasheet	100P03-GOFORD.pdf
Additional preview pages of the 100P03 datasheet.

100P03 Product details

Description

DDDD S S SG DFN5x6-8 ( 5,6,7,8 ) D D DD (4) G SSS (1, 2, 3) P-Channel MOSFET Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ TST G IS Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current ID Continuous Drain Current IDM Pulsed Drain Current TC=25°C TC=25°C TC=100°C TC=25°C Rating -30 ±20 150 -55 to 150 -100 a -100a -100a -4

Features

VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 3.1mΩ 2.2mΩ -100A.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).
HBM ESD Capability level of 6.6KV typical Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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Published: Nov 14, 2024 |