100P03 Datasheet (GOFORD)

100P03, MOSFET

DDDD S S SG DFN5x6-8 ( 5,6,7,8 ) D D DD (4) G SSS (1, 2, 3) P-Channel MOSFET Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ TST G IS Maximum Junction Temperature

100P03 Features

* VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 3.1mΩ 2.2mΩ -100A

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant)

* HBM ESD Capability level of 6.6KV typical Note : The diode connected between the gate a