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TBL250P06-3DL8 P-Channel Enhancement Mode MOSFET

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Description

P-Channel Enhancement Mode MOSFET TBL250P06-3DL8 .

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Datasheet Specifications

Part number
TBL250P06-3DL8
Manufacturer
GME
File Size
404.53 KB
Datasheet
TBL250P06-3DL8-GME.pdf
Description
P-Channel Enhancement Mode MOSFET

Features

* Super low gate charge
* 100% EAS guaranteed
* Excellent CdV/dt effect decline
* Advanced high cell density Trench technology
* Halogen free
* Qualified to AEC-Q101 standards for high reliability Mechanical Data
* Case: PDFN3×3-8L
* Molding Compound: UL Flammability

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