TBL250P06-3DL8 P-Channel Enhancement Mode MOSFET

GME

TBL250P06-3DL8 Description

P-Channel Enhancement Mode MOSFET TBL250P06-3DL8 .

TBL250P06-3DL8 Features

* Super low gate charge
* 100% EAS guaranteed
* Excellent CdV/dt effect decline
* Advanced high cell density Trench technology
* Halogen free
* Qualified to AEC-Q101 standards for high reliability Mechanical Data
* Case: PDFN3×3-8L
* Molding Compound: UL Flammability

📥 Download Datasheet

TBL250P06-3DL8 Datasheet Preview — Preview of TBL250P06-3DL8 PDF

Datasheet Details

Part number: TBL250P06-3DL8
Manufacturer: GME
File Size: 404.53 KB
Datasheet: TBL250P06-3DL8-GME.pdf
Description: P-Channel Enhancement Mode MOSFET

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📌 All Tags

P-Channel Enhancement Mode MOSFET GME

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